Ixys
IXFH6N120
Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH6N120 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
1.2kV
Drain to Source Resistance
2.6R
Drain to Source Voltage (Vdss)
1.2kV
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.95nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
2.6R
RoHS Compliant
Yes
Turn-Off Delay Time
42ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH6N120 Datasheet
Download the complete datasheet for Ixys IXFH6N120 to view detailed technical specifications.
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