Ixys
IXFH6N120P
Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFH6N120P technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
6A
Drain to Source Voltage (Vdss)
1.2kV
Input Capacitance
2.83nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
2.4R
RoHS Compliant
Yes
Series
HiPerFET™, PolarP2™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH6N120P Datasheet
Download the complete datasheet for Ixys IXFH6N120P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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