Ixys
IXFH70N15
Power Field-Effect Transistor, 70A I(D), 150V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH70N15 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
70A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
150V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.6nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
28mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
70ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH70N15 Datasheet
Download the complete datasheet for Ixys IXFH70N15 to view detailed technical specifications.
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