Ixys
IXFH74N20
Power Field-Effect Transistor, 74A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFH74N20 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
74A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
30MR
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
360W
Rds On Max
30mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
120ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH74N20 Datasheet
Download the complete datasheet for Ixys IXFH74N20 to view detailed technical specifications.
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