N-Channel Power MOSFET, 200V Vdss, 74A continuous drain current, and 34mΩ Rds On. Features a TO-247 package for through-hole mounting, 480W max power dissipation, and a maximum operating temperature of 175°C. Includes fast switching characteristics with turn-on delay of 23ns and fall time of 21ns. This silicon Metal-oxide Semiconductor FET is RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power480W
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Technical Specifications
Ixys IXFH74N20P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 74A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 34MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.46mm |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 480W |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 23ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH74N20P Datasheet
Download the complete datasheet for Ixys IXFH74N20P to view detailed technical specifications.
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