IXFH75N10

N-Channel Power MOSFET, 100V Vds, 75A Continuous Drain Current (ID), and 20mΩ Max Drain-Source On-Resistance (Rds On). This silicon metal-oxide semiconductor FET features a TO-247AD package for through-hole mounting, a max power dissipation of 300W, and operates within a temperature range of -55°C to 150°C. Additional specifications include a 4V nominal gate-source voltage (Vgs), 4.5nF input capacitance, and 60ns fall time. This RoHS compliant component is designed for high-power applications.