The IXFH80N08 is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 80V and a continuous drain current of 80A. The device is packaged in a TO-247-3 case and is available in quantities of 30. The IXFH80N08 is RoHS compliant and suitable for use in high-power applications.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH80N08 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 95ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH80N08 Datasheet
Download the complete datasheet for Ixys IXFH80N08 to view detailed technical specifications.
No datasheet is available for this part.