
N-Channel Power MOSFET, TO-247 package, featuring 85V drain-source breakdown voltage and 80A continuous drain current. Offers a low 9mΩ drain-source on-resistance, 300W maximum power dissipation, and operates across a -55°C to 150°C temperature range. Includes a 31ns fall time and 95ns turn-off delay time, with 4.8nF input capacitance. Designed for through-hole mounting and RoHS compliant.
Ixys IXFH80N085 technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 85V |
| Drain-source On Resistance-Max | 9MR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 95ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFH80N085 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
