N-channel silicon MOSFET featuring 200V drain-source breakdown voltage and 80A continuous drain current. This through-hole mounted component offers a low 28mΩ drain-source on-resistance and 360W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and includes a 20V gate-source voltage rating. The TO-247AD package facilitates robust thermal management.
PackageTO-247AD
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH80N20Q technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 28MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH80N20Q Datasheet
Download the complete datasheet for Ixys IXFH80N20Q to view detailed technical specifications.
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