The IXFH86N30T is a high power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 860W and a continuous drain current of 86A. The device is packaged in a TO-247-3 package and is mounted through a hole. It is RoHS compliant and features a trench gate structure.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFH86N30T technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 86A |
| Drain to Source Voltage (Vdss) | 300V |
| Input Capacitance | 11.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 860W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 43mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, TrenchT2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH86N30T Datasheet
Download the complete datasheet for Ixys IXFH86N30T to view detailed technical specifications.
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