N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 88A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 40mΩ drain-source resistance and 600W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and 25ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power600W
Quick Jump:
Technical Specifications
Ixys IXFH88N30P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.46mm |
| Input Capacitance | 6.3nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 25ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH88N30P Datasheet
Download the complete datasheet for Ixys IXFH88N30P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
