Ixys
IXFH8N80
Power Field-Effect Transistor, 8A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power180W
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Technical Specifications
Ixys IXFH8N80 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
800V
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.6nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
180W
Rds On Max
1.1R
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
70ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH8N80 Datasheet
Download the complete datasheet for Ixys IXFH8N80 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.