The IXFI7N80P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 7A. The device has a maximum power dissipation of 200W and is packaged in a TO-262-3 through-hole package. The IXFI7N80P is RoHS compliant and part of the HiPerFET and PolarHT series.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power200W
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Technical Specifications
Ixys IXFI7N80P technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.89nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 1.44R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFI7N80P Datasheet
Download the complete datasheet for Ixys IXFI7N80P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.