
N-Channel Power MOSFET, 70V Drain-Source Breakdown Voltage, 110A Continuous Drain Current, and 6mΩ Drain-Source On-Resistance. Features a TO-264AA plastic package for through-hole mounting, 500W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Includes 9nF input capacitance and 60ns fall time. RoHS compliant and lead-free.
Ixys IXFK110N07 technical specifications.
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 70V |
| Drain-source On Resistance-Max | 6MR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 70V |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFK110N07 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
