N-channel power MOSFET featuring 200V drain-source breakdown voltage and 120A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 17mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-264AA package, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 560W. Key electrical characteristics include a 9.1nF input capacitance and switching times of 35ns fall time and 110ns turn-off delay.
PackageTO-264AA
Current Rating120A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK120N20 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK120N20 Datasheet
Download the complete datasheet for Ixys IXFK120N20 to view detailed technical specifications.
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