The IXFK150N15 is a high-power N-channel transistor from Ixys with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 560W and a continuous drain current of 150A. The transistor is packaged in a TO-264-3 case and is mounted through a hole. It is RoHS compliant and part of the HiPerFET series.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXFK150N15 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 12.5mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK150N15 Datasheet
Download the complete datasheet for Ixys IXFK150N15 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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