N-channel MOSFET with 900V drain-source breakdown voltage and 16A continuous drain current. Features 650mΩ drain-source on-resistance and 360W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Through-hole mounting in a TO-264AA package with a 20V gate-source voltage rating. Includes fast switching characteristics with 21ns turn-on delay and 14ns fall time. RoHS compliant.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFK16N90Q technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 4nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 21ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK16N90Q Datasheet
Download the complete datasheet for Ixys IXFK16N90Q to view detailed technical specifications.
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