N-channel power MOSFET featuring 150V drain-source breakdown voltage and 180A continuous drain current. Offers a low 11mΩ drain-source on-resistance and a maximum power dissipation of 830W. Designed for through-hole mounting in a TO-264 package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Key specifications include a 5V threshold voltage and a 36ns fall time.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power830W
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Technical Specifications
Ixys IXFK180N15P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 150ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK180N15P Datasheet
Download the complete datasheet for Ixys IXFK180N15P to view detailed technical specifications.
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