N-channel MOSFET featuring 1200V drain-source breakdown voltage and 20A continuous drain current. This HiPerFET™ device offers a low Rds(on) of 750mΩ and a maximum power dissipation of 780W. Designed for through-hole mounting in a TO-264AA package, it boasts fast switching speeds with turn-on delay of 25ns and fall time of 20ns. Operating across a wide temperature range from -55°C to 150°C, this lead-free and RoHS compliant component is ideal for high-voltage applications.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power780W
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Technical Specifications
Ixys IXFK20N120 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 7.4nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 25ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK20N120 Datasheet
Download the complete datasheet for Ixys IXFK20N120 to view detailed technical specifications.
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