N-Channel Power MOSFET, 150V Drain-to-Source Voltage (Vdss) and 240A Continuous Drain Current (ID). Features low Rds On of 5.2mR, 1.25kW Max Power Dissipation, and 175°C Max Operating Temperature. This silicon Metal-oxide Semiconductor FET is housed in a TO-264 package with through-hole mounting. Includes fast switching characteristics with a 145ns fall time and 125ns turn-on delay. RoHS compliant and lead-free.
PackageTO-264
Current120A
MountingThrough Hole
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Technical Specifications
Ixys IXFK240N15T2 technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 240A |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 145ns |
| Input Capacitance | 32nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Output Current | 240A |
| Output Voltage | 150V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 120A |
| Turn-Off Delay Time | 145ns |
| Turn-On Delay Time | 125ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK240N15T2 Datasheet
Download the complete datasheet for Ixys IXFK240N15T2 to view detailed technical specifications.
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