N-channel MOSFET with 900V drain-source breakdown voltage and 24A continuous drain current. Features 450mΩ Rds On, 500W max power dissipation, and TO-264AA package for through-hole mounting. Operates from -55°C to 150°C with fast switching times including 25ns turn-on delay and 12ns fall time. Input capacitance is 5.9nF.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFK24N90Q technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 5.9nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 25ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK24N90Q Datasheet
Download the complete datasheet for Ixys IXFK24N90Q to view detailed technical specifications.
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