N-Channel Power MOSFET, 600V Vdss, 26A Continuous Drain Current (ID), and 250mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-264AA package for through-hole mounting. It offers a maximum power dissipation of 360W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 30ns turn-on delay and 16ns fall time.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFK26N60Q technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 30ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK26N60Q Datasheet
Download the complete datasheet for Ixys IXFK26N60Q to view detailed technical specifications.
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