N-Channel Power MOSFET, 900V Vds, 26A Continuous Drain Current, 300mΩ Rds On. Features 560W Max Power Dissipation, 10.8nF Input Capacitance, and 24ns Fall Time. Packaged in TO-264AA for through-hole mounting. Operates from -55°C to 150°C.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXFK26N90 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 10.8nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 60ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK26N90 Datasheet
Download the complete datasheet for Ixys IXFK26N90 to view detailed technical specifications.
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