IXFK27N80Q

N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 27A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 320mΩ drain-to-source resistance and 500W maximum power dissipation. Packaged in a TO-264AA plastic through-hole mount, it boasts fast switching speeds with a 13ns fall time. Operating from -55°C to 150°C, this RoHS compliant component is designed for high-performance applications.