N-Channel Power MOSFET, 1000V Drain to Source Voltage (Vdss) and 30A Continuous Drain Current (ID). Features 400mR maximum Drain-Source On-Resistance (Rds On) and 735W maximum power dissipation. Operates with a 5V nominal Gate to Source Voltage (Vgs) and has a 30V maximum Gate to Source Voltage. Packaged in a TO-264-3 through-hole mount with a maximum operating temperature of 150°C.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power735W
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Technical Specifications
Ixys IXFK30N100Q2 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 400mR |
| Dual Supply Voltage | 1kV |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 60ns |
| Weight | 10mg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK30N100Q2 Datasheet
Download the complete datasheet for Ixys IXFK30N100Q2 to view detailed technical specifications.
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