The IXFK30N110P is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 1.1kV and a drain to source resistance of 360mR. The device is packaged in a TO-264-3 case and is available in a rail/tube packaging format with 25 units per package. The IXFK30N110P is RoHS compliant and suitable for use in high-power applications.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power960W
Quick Jump:
Technical Specifications
Ixys IXFK30N110P technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 1.1kV |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 1.1kV |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 13.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 83ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK30N110P Datasheet
Download the complete datasheet for Ixys IXFK30N110P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
