N-channel silicon power MOSFET featuring 170V drain-to-source voltage and 320A continuous drain current. This single-element FET offers a low 5.2mΩ Rds On, enabling efficient power handling up to 1.67kW. Designed for through-hole mounting in a TO-264 package, it operates from -55°C to 175°C and is RoHS compliant. Key switching parameters include a 46ns turn-on delay and 115ns turn-off delay.
PackageTO-264
Current100A
MountingThrough Hole
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Technical Specifications
Ixys IXFK320N17T2 technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 320A |
| Drain to Source Voltage (Vdss) | 170V |
| Fall Time | 230ns |
| Input Capacitance | 45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67kW |
| Mount | Through Hole |
| Number of Drivers | 1 |
| Number of Elements | 1 |
| Number of Outputs | 1 |
| Output Current | 320A |
| Output Voltage | 170V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 100A |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 46ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK320N17T2 Datasheet
Download the complete datasheet for Ixys IXFK320N17T2 to view detailed technical specifications.
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