N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 33A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 160mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-264 package, it boasts a maximum power dissipation of 416W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include 5.7nF input capacitance and turn-off delay time of 110ns.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power416W
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Technical Specifications
Ixys IXFK33N50 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 416W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 416W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK33N50 Datasheet
Download the complete datasheet for Ixys IXFK33N50 to view detailed technical specifications.
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