N-Channel Power MOSFET, 800V Drain-Source Voltage, 34A Continuous Drain Current, and 240mΩ Max Drain-Source On-Resistance. Features include 560W Max Power Dissipation, 7.5nF Input Capacitance, 40ns Fall Time, and 100ns Turn-Off Delay Time. Operates from -55°C to 150°C and is housed in a TO-264 package for through-hole mounting. This RoHS compliant component is designed for high-power applications.
PackageTO-264AA
Current Rating34A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFK34N80 technical specifications.
General
Package/Case
TO-264AA
Continuous Drain Current (ID)
34A
Current Rating
34A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
240mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
7.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
560W
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
560W
Rds On Max
240mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
100ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFK34N80 Datasheet
Download the complete datasheet for Ixys IXFK34N80 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
