N-Channel Power MOSFET, 800V Vdss, 38A continuous drain current, and 220mΩ Rds On. This silicon metal-oxide semiconductor FET features a TO-264AA package for through-hole mounting, offering a maximum power dissipation of 735W. Key electrical characteristics include a 20ns turn-on delay, 60ns turn-off delay, and 12ns fall time, with an input capacitance of 8.34nF. Operating temperature range is -55°C to 150°C, and the component is lead-free and RoHS compliant.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power735W
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Technical Specifications
Ixys IXFK38N80Q2 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 8.34nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 20ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK38N80Q2 Datasheet
Download the complete datasheet for Ixys IXFK38N80Q2 to view detailed technical specifications.
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