The IXFK40N90P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 900V and a continuous drain current of 40A. The device has a drain to source resistance of 210mR and a maximum power dissipation of 960W. It is packaged in a TO-264-3 package and is available in a rail/tube packaging configuration.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXFK40N90P technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 46ns |
| Input Capacitance | 14nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 77ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK40N90P Datasheet
Download the complete datasheet for Ixys IXFK40N90P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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