N-Channel Power MOSFET, 600V Vdss, 44A continuous drain current (ID), and 130mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-264AA package for through-hole mounting. Key specifications include a maximum power dissipation of 560W, input capacitance of 8.9nF, and operating temperatures from -55°C to 150°C. It offers fast switching characteristics with a 40ns turn-on delay and fall time.
PackageTO-264AA
Current Rating44A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK44N60 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 44A |
| Current Rating | 44A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 130MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 8.9nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 600V |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK44N60 Datasheet
Download the complete datasheet for Ixys IXFK44N60 to view detailed technical specifications.
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