N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 48A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.1-ohm drain-source on-resistance and 500W power dissipation. Designed for through-hole mounting in a TO-264 package, it operates within a -55°C to 150°C temperature range. Key specifications include 8.4nF input capacitance and 30ns turn-on delay time.
PackageTO-264AA
Current Rating48A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK48N50 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 48A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 100mR |
| Dual Supply Voltage | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 8.4nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 500V |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK48N50 Datasheet
Download the complete datasheet for Ixys IXFK48N50 to view detailed technical specifications.
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