N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 48A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.1-ohm drain-source on-resistance and 500W power dissipation. Designed for through-hole mounting in a TO-264 package, it operates within a -55°C to 150°C temperature range. Key specifications include 8.4nF input capacitance and 30ns turn-on delay time.
PackageTO-264AA
Current Rating48A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK48N50 technical specifications.
General
Package/Case
TO-264AA
Continuous Drain Current (ID)
48A
Current Rating
48A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
100mR
Dual Supply Voltage
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
26.16mm
Input Capacitance
8.4nF
Lead Free
Lead Free
Length
19.96mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
4V
Turn-Off Delay Time
100ns
Turn-On Delay Time
30ns
DC Rated Voltage
500V
Width
5.13mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFK48N50 Datasheet
Download the complete datasheet for Ixys IXFK48N50 to view detailed technical specifications.
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