N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 48A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 135mΩ drain-source resistance and 830W maximum power dissipation. Designed for through-hole mounting in a TO-264 package, it operates from -55°C to 150°C. Key specifications include an 8.86nF input capacitance, 5V threshold voltage, 22ns fall time, and 85ns turn-off delay time. This RoHS compliant component is suitable for high-power switching applications.
PackageTO-264
Current Rating48A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK48N60P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 48A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.86nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 135mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK48N60P Datasheet
Download the complete datasheet for Ixys IXFK48N60P to view detailed technical specifications.
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