Ixys
IXFK50N50
Power Field-Effect Transistor, 50A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXFK50N50 technical specifications.
General
Package/Case
TO-264-3
Continuous Drain Current (ID)
50A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
100MR
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
9.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625W
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
560W
Rds On Max
80mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
120ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFK50N50 Datasheet
Download the complete datasheet for Ixys IXFK50N50 to view detailed technical specifications.
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