N-channel silicon power MOSFET featuring 600V drain-source breakdown voltage and 52A continuous drain current. This metal-oxide semiconductor FET offers a low 115mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 735W. Designed for through-hole mounting in a TO-264AA package, it exhibits fast switching characteristics with a fall time of 8.5ns. Operating temperature range spans from -55°C to 150°C.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power735W
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Technical Specifications
Ixys IXFK52N60Q2 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 6.8nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Rds On Max | 115mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 23ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK52N60Q2 Datasheet
Download the complete datasheet for Ixys IXFK52N60Q2 to view detailed technical specifications.
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