N-Channel Power MOSFET, 500V Vds, 64A Continuous Drain Current (ID), and 85mΩ Max Drain-Source On-Resistance (Rds On). This silicon, metal-oxide semiconductor FET features a TO-264 package for through-hole mounting. Key electrical characteristics include 8.7nF input capacitance, 5.5V threshold voltage, and 30V gate-to-source voltage. The device offers a maximum power dissipation of 830W and operates within a temperature range of -55°C to 150°C.
PackageTO-264
Current Rating64A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK64N50P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 85MR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK64N50P Datasheet
Download the complete datasheet for Ixys IXFK64N50P to view detailed technical specifications.
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