The IXFL44N60 is a high-power N-channel MOSFET with a breakdown voltage of 600V and a continuous drain current of 41A. It features a drain to source resistance of 130mR and a maximum power dissipation of 500W. The device is packaged in a through-hole configuration and is compliant with RoHS standards. It operates over a temperature range of -55°C to 150°C.
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFL44N60 technical specifications.
General
| Continuous Drain Current (ID) | 41A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.42mm |
| Input Capacitance | 8.9nF |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 42ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFL44N60 Datasheet
Download the complete datasheet for Ixys IXFL44N60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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