Ixys
IXFM13N80
Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, TO-204, 2 PIN
PackageTO-204AA
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFM13N80 technical specifications.
General
Package/Case
TO-204AA
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
800mR
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
RoHS Compliant
Yes
Turn-Off Delay Time
63ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFM13N80 Datasheet
Download the complete datasheet for Ixys IXFM13N80 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.