Ixys
IXFM35N30
Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
PackageTO-204AE
MountingThrough Hole
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Technical Specifications
Ixys IXFM35N30 technical specifications.
General
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 300V |
| Input Capacitance | 4.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFM35N30 Datasheet
Download the complete datasheet for Ixys IXFM35N30 to view detailed technical specifications.
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