Ixys
IXFN100N25
Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN100N25 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
250V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
9.1nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600W
Mount
Chassis Mount
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
600W
Rds On Max
27mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
110ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN100N25 Datasheet
Download the complete datasheet for Ixys IXFN100N25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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