N-Channel Power MOSFET, 500V Vdss, 90A continuous drain current, and 49mΩ Rds On. Features a 1.04kW power dissipation and operates from -55°C to 150°C. This silicon metal-oxide semiconductor FET is housed in a SOT-227-4 package for chassis mounting. Includes a 5V threshold voltage and 26ns fall time.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power1.04kW
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Technical Specifications
Ixys IXFN100N50P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 49mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 20nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN100N50P Datasheet
Download the complete datasheet for Ixys IXFN100N50P to view detailed technical specifications.
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