N-Channel Power MOSFET, 200V Vds, 120A Continuous Drain Current (ID). Features 17mΩ maximum drain-source on-resistance (Rds On) and 600W maximum power dissipation. Operates with a 20V gate-source voltage (Vgs) and a nominal Vgs threshold of 4V. Includes 9.1nF input capacitance, 40ns fall time, and 110ns turn-off delay. Packaged in a plastic MINIBLOC-4 (SOT-227-4) for chassis mounting. RoHS compliant.
PackageSOT-227-4
Current Rating120A
MountingChassis Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN120N20 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 17MR |
| Dual Supply Voltage | 200V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount |
| Nominal Vgs | 4V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 17mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN120N20 Datasheet
Download the complete datasheet for Ixys IXFN120N20 to view detailed technical specifications.
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