IXFN130N30

N-Channel Power MOSFET, 300V Vds, 130A Continuous Drain Current (ID), 22mΩ Rds On Max. Features 700W Max Power Dissipation, 150°C Max Operating Temperature, and a 31ns Fall Time. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 MINIBLOC-4 package, designed for chassis mount with screw termination. RoHS compliant and lead-free.