N-channel power MOSFET featuring 150V drain-source breakdown voltage and 150A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 12.5mΩ drain-to-source resistance. Designed for chassis mounting with screw termination, it operates from -55°C to 150°C with a maximum power dissipation of 600W. Key switching characteristics include a 45ns fall time, 50ns turn-on delay, and 110ns turn-off delay.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN150N15 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 150V |
| Dual Supply Voltage | 150V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 9.1nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 4V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 12.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.044kg |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN150N15 Datasheet
Download the complete datasheet for Ixys IXFN150N15 to view detailed technical specifications.
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