High-performance N-channel Power MOSFET designed for demanding applications. Features a low on-resistance (Rds(on)) and high continuous drain current capability for efficient power switching. Optimized for fast switching speeds and low gate charge, enabling reduced switching losses. Robust construction ensures reliability in high-power circuits.
Ixys IXFN150N65X2 technical specifications.
| REACH | Compliant |
| Military Spec | False |
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