Ixys
IXFN160N30T
Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXFN160N30T technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
130A
Drain to Source Voltage (Vdss)
300V
Input Capacitance
28nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900W
Mount
Chassis Mount
Packaging
Rail/Tube
Rds On Max
19mR
RoHS Compliant
Yes
Series
GigaMOS™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN160N30T Datasheet
Download the complete datasheet for Ixys IXFN160N30T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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