The IXFN170N30P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 890W and a continuous drain current of 138A. The device is packaged in a SOT-227-4 package and is lead-free and RoHS compliant. The IXFN170N30P has a drain to source breakdown voltage of 300V and a drain to source resistance of 18mR.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power890W
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Technical Specifications
Ixys IXFN170N30P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 138A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 20nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 890W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Turn-Off Delay Time | 79ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN170N30P Datasheet
Download the complete datasheet for Ixys IXFN170N30P to view detailed technical specifications.
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