N-Channel Power MOSFET featuring 150A continuous drain current and 150V drain-to-source breakdown voltage. Offers a low 11mΩ drain-to-source on-resistance, enabling efficient power handling up to 680W. Designed for chassis or panel mounting in a SOT-227-4 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C. Key switching characteristics include a 30ns turn-on delay and 36ns fall time.
PackageSOT-227-4
MountingChassis Mount, Panel
PolarityN-CHANNEL
Power680W
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Technical Specifications
Ixys IXFN180N15P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 680W |
| Mount | Chassis Mount, Panel |
| Package Quantity | 10 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 680W |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 30ns |
| Width | 25.42mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN180N15P Datasheet
Download the complete datasheet for Ixys IXFN180N15P to view detailed technical specifications.
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