N-Channel Power MOSFET, 200A continuous drain current, 70V drain-source breakdown voltage, and 6mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a 4V gate threshold voltage and a 20V gate-to-source voltage rating. Designed for chassis mounting with screw termination, it offers a maximum power dissipation of 520W and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and packaged in SOT-227-4.
PackageSOT-227-4
Current Rating200A
MountingChassis Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFN200N07 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 200A |
| Current Rating | 200A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 70V |
| Drain-source On Resistance-Max | 6MR |
| Dual Supply Voltage | 70V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount |
| Nominal Vgs | 4V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 70V |
| Weight | 0.044kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN200N07 Datasheet
Download the complete datasheet for Ixys IXFN200N07 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
